DocumentCode
3323500
Title
Charge carrier transport and recombination controlled by fluctuating localized states
Author
Arkhipov, Vladimir I. ; Adriaenssens, Guy J.
Author_Institution
Moscow Inst. of Phys. & Eng., Russia
fYear
1996
fDate
25-30 Sep 1996
Firstpage
28
Lastpage
33
Abstract
A model is presented which explains apparent temperature dependences of the density of state distributions in amorphous semiconductors and dielectrics. The model takes into account temporal fluctuations of the localized-state energies and predicts distributions of activation energies with sharp edges whose positions are temperature dependent. Effect of the fluctuations on charge carrier transport is discussed
Keywords
amorphous semiconductors; electron-hole recombination; electronic density of states; localised states; activation energy; amorphous semiconductor; charge carrier transport; density of state distribution; dielectric; localized states; recombination; temperature dependence; temporal fluctuations; Amorphous materials; Amorphous semiconductors; Charge carriers; Density measurement; Energy measurement; Fluctuations; Optical modulation; Radiative recombination; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location
Shanghai
Print_ISBN
0-7803-2695-4
Type
conf
DOI
10.1109/ISE.1996.578035
Filename
578035
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