A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier

Author

Ingram, D.L. ; Chen, Y.C. ; Kraus, J. ; Brunner, B. ; Allen, B. ; Yen, H.C. ; Lau, K.F.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1999

fDate

1999

Firstpage

95

Lastpage

98

Abstract

Presented is the development of a 2-stage 427 mW (26.3 dBm), 19% PAE compact W-band InP monolithic microwave integrated circuit (MMIC) power amplifier with an associated power gain of 8.9 dB. 20% PAE with output power of 407 mW (26.1 dBm) was achieved when the amplifier was biased for optimal efficiency. These MMIC amplifiers were fabricated with a 2-mil thick substrate using 0.15-μm InGaAs/InAlAs/InP HEMT technology. InP amplifier, though operates at lower drain voltage, but it delivers compatible power with double the PAE of its GaAs counter-part

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; indium compounds; millimetre wave power amplifiers; 427 mW; 8.9 dB; HEMT MMIC power amplifier; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP HEMT technology; InP; biased amplifier; compact W-band; optimal efficiency; Gain; HEMTs; Indium gallium arsenide; Indium phosphide; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE

Conference_Location

Anaheim, CA

ISSN

1097-2633

Print_ISBN

0-7803-5604-7

Type

conf

DOI

10.1109/RFIC.1999.805247

Filename

805247