DocumentCode
3323564
Title
15 dB gain, DC-20 GHz InP HBT balanced analog mixer and variable gain amplifier with 27 dB of dynamic range
Author
Kobayashi, K.W. ; Gutierrez-Aitken, A. ; Cowles, J. ; Tang, B. ; Desrosiers, R. ; Medvedev, V. ; Tran, L.T. ; Block, T.R. ; Oki, A.K. ; Streit, D.C.
Author_Institution
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fYear
1999
fDate
1999
Firstpage
105
Lastpage
108
Abstract
This paper reports on a DC-20 GHz InP HBT active mixer which is believed to benchmark the highest gain-BW product (GBP) so far reported for a direct-coupled analog mixer IC. The InP HBT active mixer is based on the Gilbert cell and integrates RF, LO and IF amplifiers. High speed 70 GHz fT and 160 GHz fmax InP HBT devices along with microwave matching accounts for its record performance. Operated as a down-converter mixer, the MMIC achieves an RF bandwidth from DC-20 GHz with 15.3 dB gain and benchmarks a 10 dB improvement in GBP over state-of-the-art analog mixer ICs. The LO-IF isolation is >17 dB with the LO and IF amplifiers and is >32 dB for the internal mixer cell up to 20 GHz. Excellent 2-2 spur suppression of >20 dBc is also achieved near P1dB. The analog multiplier was also operated as a variable gain amplifier and achieved DC-18 GHz BW, 20 dB gain, 12 dBm IP3, and >25 dB of dynamic range. Single-ended peak-to-peak output voltage of 600 mV is obtained with a ±35 mV 15 Gb/s 25-1 PRBS input. The InP-based analog multiplier IC is an attractive building block for future high data rate direct-digital modulator-demodulator and receiver applications for satellite, LMDS, and fiber-telecommunication systems
Keywords
III-V semiconductors; MMIC mixers; bipolar MMIC; bipolar analogue integrated circuits; coupled circuits; heterojunction bipolar transistors; indium compounds; 0 to 20 GHz; 15 dB; 160 GHz; 2-2 spur suppression; 20 dB; 70 GHz; Gilbert cell; HBT balanced analog mixer; IF amplifiers; III-V semiconductors; InP; LO-IF isolation; MMIC; RF bandwidth; direct-coupled analog mixer IC; down-converter mixer; dynamic range; gain-BW product; internal mixer cell; microwave matching; single-ended peak-to-peak output voltage; variable gain amplifier; Analog integrated circuits; Bandwidth; Gain; Heterojunction bipolar transistors; Indium phosphide; MMICs; Microwave devices; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
Conference_Location
Anaheim, CA
ISSN
1097-2633
Print_ISBN
0-7803-5604-7
Type
conf
DOI
10.1109/RFIC.1999.805249
Filename
805249
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