Title :
A high gain, low power MMIC LNA for Ka-band using InP HEMTs
Author :
Pobanz, Carl ; Matloubian, Mehran ; Nguyen, Loi ; Case, Michael ; Hu, Ming ; Lui, Mark ; Hooper, Catherine ; Janke, Paul
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
Compact Ka-Band MMIC low noise amplifiers have been developed with high gain, low VSWR and low power dissipation using 0.12 μm InP HEMT technology. A five stage single-ended LNA achieved 40 dB of gain and a 1.4 dB average noise figure over the 27-30 GHz band with an input return loss in excess of 15 dB. The 3×1 mm2 MMIC consumes less than 40 milliwatts of dc power
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; feedback amplifiers; indium compounds; low-power electronics; 0.12 micron; 1.4 dB; 27 to 30 GHz; 40 dB; 40 mW; HEMTs; III-V semiconductors; InP; Ka-band; LNA; MMIC; VSWR; input return loss; low power electronics; single-ended amplifier; Gain; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; MODFETs; Noise figure; Noise measurement; Pollution measurement; Power dissipation;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-5604-7
DOI :
10.1109/RFIC.1999.805258
