• DocumentCode
    3323709
  • Title

    A high gain, low power MMIC LNA for Ka-band using InP HEMTs

  • Author

    Pobanz, Carl ; Matloubian, Mehran ; Nguyen, Loi ; Case, Michael ; Hu, Ming ; Lui, Mark ; Hooper, Catherine ; Janke, Paul

  • Author_Institution
    HRL Labs., Malibu, CA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    149
  • Lastpage
    152
  • Abstract
    Compact Ka-Band MMIC low noise amplifiers have been developed with high gain, low VSWR and low power dissipation using 0.12 μm InP HEMT technology. A five stage single-ended LNA achieved 40 dB of gain and a 1.4 dB average noise figure over the 27-30 GHz band with an input return loss in excess of 15 dB. The 3×1 mm2 MMIC consumes less than 40 milliwatts of dc power
  • Keywords
    HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; feedback amplifiers; indium compounds; low-power electronics; 0.12 micron; 1.4 dB; 27 to 30 GHz; 40 dB; 40 mW; HEMTs; III-V semiconductors; InP; Ka-band; LNA; MMIC; VSWR; input return loss; low power electronics; single-ended amplifier; Gain; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; MODFETs; Noise figure; Noise measurement; Pollution measurement; Power dissipation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
  • Conference_Location
    Anaheim, CA
  • ISSN
    1097-2633
  • Print_ISBN
    0-7803-5604-7
  • Type

    conf

  • DOI
    10.1109/RFIC.1999.805258
  • Filename
    805258
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3323709