Title :
A 3 V GaAs MESFET monolithic transmitter with cross-coupled common-source, common-gate pair linear mixer for cellular hand-held phones
Author :
Kim, Min-Gun ; Mun, Jae-Kyoung ; Lim, Jong-Won ; Kim, Chung-Hwan ; Lee, Chang-Seok ; Lee, Jaejin
Author_Institution :
Dept. of Compound Semicond., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Abstract :
A linear mixer with cross-coupled common-source, common-gate pair FET´s was proposed and its performances were verified in the GaAs MESFET monolithic transmitter for cellular hand-held phones. The transmitter showed measured conversion gain of 31.2~31.6 dB at LO input power of -5~0 dBm, 1 dB compression point of power gain was 9.5 dBm at output power, and two-tone (with offset frequency Δf=442.5 kHz) third-order intermodulation distortion (IMD3) at a total output power of 0 dBm was to be -47 dBc with a 3 V of supply voltage and 43 mA of current consumption
Keywords :
III-V semiconductors; MESFET integrated circuits; cellular radio; gallium arsenide; intermodulation distortion; low-power electronics; mixers (circuits); radio transmitters; telephone sets; 3 V; 31.2 to 31.6 dB; 43 mA; GaAs; GaAs MESFET monolithic transmitter; cellular hand-held phone; compression point; conversion gain; cross-coupled common-source common-gate pair linear mixer; low voltage RF chip; mobile communication; third-order intermodulation distortion; Current measurement; Distortion measurement; FETs; Frequency measurement; Gain measurement; Gallium arsenide; MESFETs; Power generation; Power measurement; Transmitters;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-5604-7
DOI :
10.1109/RFIC.1999.805272
