Theoretical analysis of mechanism of charge storage in silicon dioxide wafer electrets

Author

Huang, Xiaoqin ; Xie, Xishun

Author_Institution

Dept. of Phys., Nanjing Normal Univ., China

fYear

1996

fDate

25-30 Sep 1996

Firstpage

46

Lastpage

48

Abstract

In this paper, we present theoretical approach of mechanism of charge storage and transport caused by high electric field polarization or electron beam bombardment in SiO₂ grown thermally on Si wafer substrates. The dominant mechanism of charge storage in SiO₂ electrets is suggested to be the trapping and drift of injected charges from the upper surface to the bulk oxide. The influence of charge trapping on the surface of SiO₂ and Si-SiO₂ interface has also been discussed

Keywords

dielectric polarisation; electrets; electron beam effects; silicon compounds; Si substrate; Si-SiO₂; Si-SiO₂ interface; SiO₂; SiO₂ surface; charge drift; charge injection; charge storage; charge transport; charge trapping; electric field polarization; electron beam bombardment; silicon dioxide wafer electret; thermally grown SiO₂; Electrets; Electron beams; Electron traps; Material storage; Physics; Polarization; Polymers; Silicon compounds; Surface charging; Surface discharges;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 1996. (ISE 9), 9th International Symposium on

Conference_Location

Shanghai

Print_ISBN

0-7803-2695-4

Type

conf

DOI

10.1109/ISE.1996.578039

Filename

578039