Title :
Theoretical analysis of mechanism of charge storage in silicon dioxide wafer electrets
Author :
Huang, Xiaoqin ; Xie, Xishun
Author_Institution :
Dept. of Phys., Nanjing Normal Univ., China
Abstract :
In this paper, we present theoretical approach of mechanism of charge storage and transport caused by high electric field polarization or electron beam bombardment in SiO2 grown thermally on Si wafer substrates. The dominant mechanism of charge storage in SiO2 electrets is suggested to be the trapping and drift of injected charges from the upper surface to the bulk oxide. The influence of charge trapping on the surface of SiO2 and Si-SiO2 interface has also been discussed
Keywords :
dielectric polarisation; electrets; electron beam effects; silicon compounds; Si substrate; Si-SiO2; Si-SiO2 interface; SiO2; SiO2 surface; charge drift; charge injection; charge storage; charge transport; charge trapping; electric field polarization; electron beam bombardment; silicon dioxide wafer electret; thermally grown SiO2; Electrets; Electron beams; Electron traps; Material storage; Physics; Polarization; Polymers; Silicon compounds; Surface charging; Surface discharges;
Conference_Titel :
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-2695-4
DOI :
10.1109/ISE.1996.578039
