Title :
Low-voltage amplifier with improved linearity using triode region MOSFET
Author :
Sato, Hiroki ; Takagi, Shigetaka
Author_Institution :
Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
This paper proposes a voltage amplifier based on MOS current follower. It has a simple structure and depends on device matching instead of specific non-linear characteristics of active devices, and has greatly improved performance in terms of linearity, voltage signal dynamic range, and minimum supply voltage. Simulation results show that HD2 of 1 Vp-p output voltage is about -50 dB at 1.8 V supply voltage and 90 μA static current.
Keywords :
MOSFET circuits; amplifiers; linearisation techniques; MOS current follower; device matching; linearity improvement; low-voltage amplifier; size 90 mum; triode region MOSFET; voltage 1.8 V; CMOS integrated circuits; Dynamic range; Gain; Linearity; Logic gates; MOSFET; Performance evaluation;
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon
DOI :
10.1109/ISCAS.2015.7169185
