• DocumentCode
    3325745
  • Title

    Equalizer implementation for 10 Gbps serial data link in 90 nm CMOS technology

  • Author

    El-Fattah, Ahmed Adel Abd ; Mohamed, Fady Atef Naguib ; Arafa, Ahmed Mohamed ; Ahmed, Marwa Mostafa ; El-Hay, Dina Reda Abd ; EL-Aziz, Mohamed Omar Abd

  • Author_Institution
    Ain Shams Univ., Cairo
  • fYear
    2007
  • fDate
    29-31 Dec. 2007
  • Firstpage
    453
  • Lastpage
    456
  • Abstract
    This paper presents a 10-Gbps SerDes equalizer using 90-nm standard CMOS technology. It is would be integrated into ASIC designs that require serial link transceivers. The equalizer used to overcome the effects of channel loss and intersymbol interference (ISI), these effects result from the reflections and the finite channel bandwidth. The transmitter features a 4 tap feed forward equalizer (FFE) that can supply up to 800 mV peak-to-peak differential on 100-Ohm differential termination. The receiver employs a 4 tap adaptive decision feedback equalizer (DFE) in a speculative approach. The adaptation uses a modified form of the LMS algorithm. High speed circuits were implemented using CML topology. Both the transmitter and receiver use half rate architecture. The equalizer power consumption is 22.2 mW at a supply voltage of 1.2 V.
  • Keywords
    CMOS integrated circuits; application specific integrated circuits; equalisers; ASIC design; CMOS technology; SerDes equalizer; adaptive decision feedback equalizer; bit rate 10 Gbit/s; channel loss; differential termination; equalizer implementation; feedforward equalizer; finite channel bandwidth; intersymbol interference; peak-to-peak differential; serial data link; serial link transceiver; size 90 nm; speculative approach; Application specific integrated circuits; Bandwidth; CMOS technology; Decision feedback equalizers; Feeds; Intersymbol interference; Reflection; Termination of employment; Transceivers; Transmitters; Adaptive Equalization; Decision Feedback Equalizer; Feed Forward Equalizer; SerDes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2007. ICM 2007. Internatonal Conference on
  • Conference_Location
    Cairo
  • Print_ISBN
    978-1-4244-1846-6
  • Electronic_ISBN
    978-1-4244-1847-3
  • Type

    conf

  • DOI
    10.1109/ICM.2007.4497647
  • Filename
    4497647