• DocumentCode
    3326032
  • Title

    Theoretical Study on Electronic Structure and Conductivity of Y-Doped ZnO

  • Author

    Chen, Lanli ; Xiong, Zhihua

  • Author_Institution
    Key Lab. for Optoelectron. & Commun. of Jiangxi Province, Jiangxi Sci. & Technol. Normal Univ., Nanchang, China
  • fYear
    2011
  • fDate
    16-18 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Based on the first principles calculations, using density functional theory within the generalized gradient approximation, we perform a study on Y-doped ZnO, where the total density of states (TDOS), the partial density of states (PDOS) and band structure and conductivity of the systems are included. The calculated results show that with the increase of concentration of Y, the lattice parameter is expanded. Moreover, from the PDOS, we can see that the valence band maximum is determined by the O-p states and the conduction band minimum is depended on the Y-s and Zn-s states. Simultaneously, it is found that as the increase of concentration of Y, the band gap of dopant system is broadening. Its reason is that the valence band moving towards into the lower energy is more than the conduction band. In addition, we calculated the number of the electrons which go into the conduction band. We found that as the increase of doping concentration, the number of the electrons decrease. The conductivity of the system is enhanced with the increase of Y concentration. Therefore, it can be concluded that the low concentration of Y doping ZnO demonstrates the better conductivity.
  • Keywords
    II-VI semiconductors; ab initio calculations; conduction bands; density functional theory; doping profiles; electrical conductivity; electronic density of states; energy gap; gradient methods; lattice constants; semiconductor doping; valence bands; wide band gap semiconductors; yttrium; zinc compounds; O-p states; ZnO:Y; band gap; band structure; conduction band; conductivity; density functional theory; doping concentration; electronic structure; first principles calculations; generalized gradient approximation; lattice parameter; partial density of states; total density of states; valence band; Conductivity; Doping; Lattices; Optical films; Photonic band gap; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronics (SOPO), 2011 Symposium on
  • Conference_Location
    Wuhan
  • ISSN
    2156-8464
  • Print_ISBN
    978-1-4244-6555-2
  • Type

    conf

  • DOI
    10.1109/SOPO.2011.5780493
  • Filename
    5780493