• DocumentCode
    332622
  • Title

    Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films

  • Author

    Seol, K.S. ; Futami, T. ; Watanabe, T. ; Ohki, Y. ; Takiyama, M.

  • Author_Institution
    Dept. of Electr., Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan
  • fYear
    1998
  • fDate
    27-30 Sep 1998
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    We have investigated the effects of implantation and thermal annealing upon the photoluminescence observed in a-Si3N4 films prepared by the low-pressure chemical vapor deposition (LPCVD) method, in order to explore the correlation between the PL and the defects induced by ion-implantation and thermal annealing
  • Keywords
    CVD coatings; Fourier transform spectra; annealing; dielectric thin films; infrared spectra; ion implantation; noncrystalline defects; photoluminescence; silicon compounds; LPCVD; Si3N4; amorphous films; defects; ion implantation; photoluminescence; thermal annealing; Amorphous silicon; Dielectrics and electrical insulation; Electron optics; Energy measurement; Ion implantation; Optical films; Photoluminescence; Pulse measurements; Rapid thermal annealing; Semiconductor films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
  • Conference_Location
    Toyohashi
  • Print_ISBN
    4-88686-050-8
  • Type

    conf

  • DOI
    10.1109/ISEIM.1998.741702
  • Filename
    741702
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=332622