DocumentCode :
3326258
Title :
Study of gas sensor with carbon nanotube film on the substrate of porous silicon
Author :
Zhang, Yong ; Liu, Junhua ; Li, Xin ; Dou, Juying ; Liu, Weihua ; He, Yongning ; Zhu, Changchun
Author_Institution :
Dept. of Autom., Xi´´an Jiaotong: Univ., China
fYear :
2001
fDate :
2001
Firstpage :
13
Lastpage :
14
Abstract :
A new method of obtaining extremely high electric fields in a very small region near the tip of a carbon nanotube, with diameter of nanometer order, is studied. This method makes the self-sustaining dark discharge voltage decrease to less than 220 V, which is in the safe range. The carbon nanotube array film is used as a cathode to form a new kind of gas sensor based on the gas discharge. The discharge current at room temperature and atmospheric pressure increases from the order of nanoamperes to that of microamperes. The electrical characteristics of several gases at atmospheric pressure are studied. The self-sustaining dark discharge voltages of different gases vary, as do the discharge currents. Porous silicon is selected as the substrate for the carbon nanotubes. This can improve the adhesion of the nanotube on the substrate and so prolong the lifetime of the cathode
Keywords :
carbon nanotubes; cathodes; discharges (electric); elemental semiconductors; gas sensors; porous semiconductors; silicon; vacuum microelectronics; 220 V; C nanotube array film; C-Si; Si; adhesion; atmospheric pressure; carbon nanotube film; cathode; discharge current; electric conductance; extremely high electric fields; gas concentration; gas sensor; nanometer order diameter; porous silicon substrate; room temperature; self-sustaining dark discharge voltage; Carbon nanotubes; Cathodes; Discharges; Electric variables; Gas detectors; Gases; Sensor arrays; Substrates; Temperature sensors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
Type :
conf
DOI :
10.1109/IVMC.2001.939629
Filename :
939629
Link To Document :
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