A new method of internal micrographic visualization of IC and vacuum microelectronic devices by crossing the surface

A novel nondestructive and contactless method has been developed in our laboratory to obtain the internal micrograph that crosses the surface insulation layer of ICs and vacuum microelectronic devices. The method of internal micrographic visualisation by crossing the surface insulation layer (MIMVCS) can be used to nondestructively obtain microstructure information (such as inhomogeneities or material defects) of ICs and vacuum microelectronic devices below the insulation layers. Based upon the principle of the MIMVCS, we have successfully devised a detector that can image the subsurface topography of ICs and vacuum microelectronic devices below the insulation layer. The detector of internal micrographic visualization by crossing the surface (DIMVCS) can be added as an attachment to an SEM