Title :
A realistic adventure for the preparation of an ideal field emission device with quasi-zero tunneling barrier
Author :
Kwon, Ki-Rock ; Lee, Jae-Hoon ; Lee, Myoung-Bok ; Bae, Sung-Chan ; Hahm, Sung-Ho ; Lee, Jung-Hee
Author_Institution :
Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Taegu, South Korea
Abstract :
For the realistic implementation of an ideal field emission device with quasi-zero tunneling barrier, a new and fundamental approach has been conducted by inducing an intelligent thin layer on the cathode tip surface via a field-assisted self-aligning (FASA) process
Keywords :
electron field emission; tunnelling; vacuum microelectronics; Auger electron spectra; Si; cathode tip surface; electron tunneling barrier; field emitter arrays; field-assisted self-aligning process; ideal field emission device; intelligent thin layer; polycrystalline silicon cathode-tips; quasi-zero tunneling barrier; turn-on fields; ultra thin wide bandgap semiconducting layers; Cathodes; Conducting materials; Current density; Electrons; Semiconductivity; Shape control; Solid state circuits; Tunneling; Ultra wideband technology; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939632
