A 8-mW 77-GHz band CMOS LNA by using reduced simultaneous noise and impedance matching technique

Author

Chun-Lin Ko ; Chun-Hsing Li ; Chien-Nan Kuo ; Ming-Ching Kuo ; Da-Chiang Chang

Author_Institution

Nat. Chip Implementation Center, Nat. Appl. Res. Labs., Hsinchu, Taiwan

fYear

2015

fDate

24-27 May 2015

Firstpage

2988

Lastpage

2991

Abstract

This paper presents analysis and design of source inductance for multistage LNA at 77-GHz band in 90 nm CMOS technology. Instead of simultaneous noise and impedance matching, the analysis shows the optimum degeneration of the single stage design for millimeter-wave frequencies. A low-power 77-GHz band LNA has been demonstrated to verify the optimization result. By using the proposed method, the LNA exhibited a low noise figure of 5.1 dB and a gain of 18.1 dB at 78.5 GHz with only 8 mW from a 1-V power supply.

Keywords

CMOS integrated circuits; impedance matching; low noise amplifiers; millimetre wave amplifiers; CMOS technology; frequency 77 GHz; frequency 78.5 GHz; gain 18.1 dB; low-power 77-GHz band LNA; millimeter-wave frequencies; multistage LNA; power 8 mW; simultaneous noise and impedance matching; size 90 nm; source inductance; voltage 1 V; CMOS integrated circuits; CMOS technology; Gain; Noise; Noise figure; Receivers; LNA; millimeter-wave; simultaneous noise and impedance matching; source degeneration;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2015 IEEE International Symposium on

Conference_Location

Lisbon

Type

conf

DOI

10.1109/ISCAS.2015.7169315

Filename

7169315