DocumentCode
3326597
Title
Transport-limited emission from carbon nanotubes
Author
Shaw, J.L. ; Hsu, D.S.Y.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
2001
fDate
2001
Firstpage
45
Lastpage
46
Abstract
We have recently demonstrated emission from arrays of gated multiwall carbon nanotubes on silicon substrates. In addition to fabrication development, these structures are useful for study of the carbon nanotube emission properties. To that end, we have measured the effect of emission current, temperature, and gas environments on the energy distributions. We find that the emission near the Fermi level saturates at high currents, but the effect is reduced at elevated temperature. Because the emission threshold does not change, we believe the low electron density near EF causes the saturation
Keywords
Fermi level; carbon nanotubes; electron field emission; C; Fermi level; Si; carbon nanotubes; electron density; energy distribution; fabrication; gas environment; gated multiwall carbon nanotube array; silicon substrate; temperature dependence; transport-limited emission; Carbon nanotubes; Contacts; Current measurement; Electron emission; Energy measurement; Fabrication; Laboratories; Silicon; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location
Davis, CA
Print_ISBN
0-7803-7197-6
Type
conf
DOI
10.1109/IVMC.2001.939645
Filename
939645
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