• DocumentCode
    3326597
  • Title

    Transport-limited emission from carbon nanotubes

  • Author

    Shaw, J.L. ; Hsu, D.S.Y.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    45
  • Lastpage
    46
  • Abstract
    We have recently demonstrated emission from arrays of gated multiwall carbon nanotubes on silicon substrates. In addition to fabrication development, these structures are useful for study of the carbon nanotube emission properties. To that end, we have measured the effect of emission current, temperature, and gas environments on the energy distributions. We find that the emission near the Fermi level saturates at high currents, but the effect is reduced at elevated temperature. Because the emission threshold does not change, we believe the low electron density near EF causes the saturation
  • Keywords
    Fermi level; carbon nanotubes; electron field emission; C; Fermi level; Si; carbon nanotubes; electron density; energy distribution; fabrication; gas environment; gated multiwall carbon nanotube array; silicon substrate; temperature dependence; transport-limited emission; Carbon nanotubes; Contacts; Current measurement; Electron emission; Energy measurement; Fabrication; Laboratories; Silicon; Temperature distribution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
  • Conference_Location
    Davis, CA
  • Print_ISBN
    0-7803-7197-6
  • Type

    conf

  • DOI
    10.1109/IVMC.2001.939645
  • Filename
    939645