Title :
RF- and noise characterisation of MOSFETs for mobile communications applications
Author :
Breuer, V. ; Klápproth, L. ; Tempel, M. ; Böck, G. ; Werther, O.
Author_Institution :
Microwave Eng. Group, Tech. Univ. Berlin, Germany
Abstract :
We present noise characterisations of silicon MOSFETs in terms of the four noise parameters from 150 MHz to 20 GHz. A special tuner system was designed and built to measure below 1 GHz. Additionally we present S-parameter measurements and show the good correspondence which can be achieved between measured and simulated S-parameters based on the extracted small signal elements
Keywords :
MOSFET; S-parameters; UHF field effect transistors; UHF measurement; elemental semiconductors; microwave field effect transistors; microwave measurement; mobile radio; semiconductor device measurement; semiconductor device noise; silicon; 150 MHz to 20 GHz; MOSFETs; RF- characterisation; S-parameter measurements; Si; extracted small signal elements; mobile communications applications; noise characterisation; noise parameters; tuner system; Circuit noise; Equivalent circuits; Frequency; MOSFETs; Mobile communication; Noise measurement; Scattering parameters; Silicon; Time measurement; Tuners;
Conference_Titel :
Microwaves and Radar, 1998. MIKON '98., 12th International Conference on
Conference_Location :
Krakow
Print_ISBN :
83-906662-0-0
DOI :
10.1109/MIKON.1998.742806
