Field emitter using multi-walled carbon nanotubes grown on silicon tips by microwave plasma-enhanced CVD

Author

Wong, Y.M. ; Kang, W.P. ; Davidson, J.L. ; Wisitsora-at, A. ; Soh, K.L. ; Li, Q. ; Xu, J.F.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

fYear

2001

fDate

2001

Firstpage

49

Lastpage

50

Abstract

Carbon nanotubes (CNTs) were selectively grown on the silicon tips and the surrounding region by microwave plasma-enhanced chemical vapor deposition. The silicon substrate containing silicon conical tips was sputtered with the Palladium transition metal, acting as a catalytic center for nanocluster nucleation during CVD deposition. Curly and randomly oriented CNTs were found to grow selectively only on the surrounding areas of the silicon tips. Electron field emission tests carried out show a low turn-on field of approximately 3.2 V/μm. Our results show the ability to selectively grow CNTs on the silicon tip region and may have practical applications for microelectronics

Keywords

carbon nanotubes; electron field emission; nucleation; plasma CVD coatings; C; Pd; Si; electron field emission; field emitter; microwave plasma-enhanced CVD; multi-walled carbon nanotubes; nanocluster nucleation; selective growth; silicon conical tip; sputtered palladium transition metal catalytic center; turn-on field; Carbon nanotubes; Chemical vapor deposition; Hydrogen; Microelectronics; Palladium; Plasma chemistry; Plasma temperature; Scanning electron microscopy; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939647

Filename

939647