Title :
Gated carbon nanotube emitters grown on silicon trench wells with a sidewall spacer for stable vacuum microwave devices
Author :
Ahn, Seong-Deok ; Song, Yoon-Ho ; Choi, Sung-Yool ; PARK, Jong-Bong ; Sohn, Jung-Inn ; Lee, Seong-Hoon ; Lee, Jin Ho ; Cho, Kyung-Ik
Author_Institution :
Micro-Electronics Technol. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
We present the gated carbon nanotubes (CNTs) emitters grown on silicon trench wells with a sidewall spacer for the application of vacuum microwave devices. The side wall spacer enables us to fabricate a highly stable gated CNT emitter. The developed CNT emitter can be. applicable. to the pre-bunched electron beam sources for microwave amplifier tubes
Keywords :
carbon nanotubes; electron field emission; electron sources; microwave amplifiers; microwave tubes; vacuum microelectronics; C; Si; gated carbon nanotube field emitter; microwave amplifier tube; pre-bunched electron beam source; sidewall spacer; silicon trench well; vacuum microwave device; Carbon nanotubes; Chemical vapor deposition; Fabrication; Iron; Materials science and technology; Microwave devices; Microwave technology; Silicon; Substrates; Vacuum technology;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939650
