Modeling and calculation of nanostructural field emission diode characteristics

Author

Tatarenko, N.I. ; Vorobyev, A.Y.

Author_Institution

Sci. Res. Inst. of Precision Devices, Russian Aerospace Agency, Moscow, Russia

fYear

2001

fDate

2001

Firstpage

81

Lastpage

82

Abstract

A porous anodic alumina (AA) with a regular nanoporous structure, formed naturally (without processes of submicron lithography) is a cheap and unique basis for manufacturing nanoscale field emission devices. This work illustrates the results of modeling and calculation of I-V characteristics of a nanostructural field emission diode (FED) consisting of a regular array of uniform cylindrically shaped diode cells, the outer diameter of which is equal to that of oxide cells (OCs) of AA, and their packing density corresponds to that of OCs

Keywords

alumina; anodised layers; diodes; electron field emission; nanostructured materials; porous materials; vacuum microelectronics; Al₂O₃; I-V characteristics; nanostructural field emission diode; porous anodic alumina; Anodes; Diodes; Electromagnetic modeling; Lithography; Manufacturing processes; Maxwell equations; Nanoporous materials; Nanoscale devices; Region 8; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939663

Filename

939663