• DocumentCode
    3326896
  • Title

    Theoretical investigation of the stoichiometric dependence of the field emission from AlxGa1-xN

  • Author

    Chung, M.S. ; Cutler, P.H. ; Miskovsky, N.M.

  • Author_Institution
    Dept. of Phys., Ulsan Univ., South Korea
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    91
  • Lastpage
    92
  • Abstract
    The field emission current density j from AlxGa1-x N is calculated as a function of stoichiometry. Using the reported x-dependence of the electron affinity χ and the carrier concentration n, we calculate j as a function of x only. The plot of j versus x is found to exhibit a peak whose position changes with an external field F
  • Keywords
    III-V semiconductors; aluminium compounds; electron affinity; electron field emission; gallium compounds; stoichiometry; wide band gap semiconductors; AlxGa1-xN; carrier concentration; electron affinity; field emission; field emission current density; stoichiometric dependence; Cathodes; Current density; Distribution functions; Doping; Electron emission; Gallium nitride; Physics; Poisson equations; Postal services; Schrodinger equation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
  • Conference_Location
    Davis, CA
  • Print_ISBN
    0-7803-7197-6
  • Type

    conf

  • DOI
    10.1109/IVMC.2001.939668
  • Filename
    939668
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3326896