Title :
Theoretical investigation of the stoichiometric dependence of the field emission from AlxGa1-xN
Author :
Chung, M.S. ; Cutler, P.H. ; Miskovsky, N.M.
Author_Institution :
Dept. of Phys., Ulsan Univ., South Korea
Abstract :
The field emission current density j from AlxGa1-x N is calculated as a function of stoichiometry. Using the reported x-dependence of the electron affinity χ and the carrier concentration n, we calculate j as a function of x only. The plot of j versus x is found to exhibit a peak whose position changes with an external field F
Keywords :
III-V semiconductors; aluminium compounds; electron affinity; electron field emission; gallium compounds; stoichiometry; wide band gap semiconductors; AlxGa1-xN; carrier concentration; electron affinity; field emission; field emission current density; stoichiometric dependence; Cathodes; Current density; Distribution functions; Doping; Electron emission; Gallium nitride; Physics; Poisson equations; Postal services; Schrodinger equation;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939668
