• DocumentCode
    3327089
  • Title

    IDeF-X SX0: A low power CMOS ASIC for the readout of Cd(Zn)Te detectors

  • Author

    Gevin, O. ; Lugiez, F. ; Delagnes, E. ; Limousin, O. ; Meuris, A.

  • Author_Institution
    DSM, CEA Saclay, Gif-sur-Yvette, France
  • fYear
    2009
  • fDate
    Oct. 24 2009-Nov. 1 2009
  • Firstpage
    318
  • Lastpage
    321
  • Abstract
    The last member of the IDeF-X ASIC family is presented: IDeF-X SX0 a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. It has been designed in the standard AMS CMOS 0.35 ¿m process technology. The ASIC has been optimized to reduce the power consumption which is now 600 ¿W per channel; it is five times lower than the power consumption of the previous IDeF-X ECLAIRs chip. Moreover, the dynamic range of the ASIC can now be extended to more than 1 MeV thanks to the in-channel variable gain stage. When no detector is connected to the chip, the lowest equivalent noise charge (ENC), achieved at a 9 ¿s peak time, is 72 electrons rms. IDeF-X SX0 has been evaluated by performing spectroscopy measurements at room temperature with a thin CdTe Schottky detector. The energy resolution was found to be 1.6 keV fwhm at 60 keV with an 241Am source. The ASIC has been designed for space applications and it will be used for the readout of 16 × 16 pixels CdTe or CdZnTe pixellated detectors to build a new low power Caliste micro Gamma camera.
  • Keywords
    CMOS integrated circuits; X-ray spectroscopy; application specific integrated circuits; nuclear electronics; readout electronics; semiconductor counters; 32-channel front end ASIC; 241Am source; CdTe Schottky detector; IDeF-X ASIC family; IDeF-X ECLAIRs chip; IDeF-X SX0; cadmium telluride detector; cadmium zinc telluride detector; energy resolution; equivalent noise charge; in-channel variable gain stage; low power CMOS ASIC; low power Caliste micro gamma camera; power consumption; spectroscopy measurements; standard AMS CMOS process technology; Application specific integrated circuits; CMOS process; CMOS technology; Cadmium compounds; Detectors; Dynamic range; Energy consumption; Gain; Temperature measurement; Zinc compounds; ASIC; CMOS; CdTe; CdZnTe; Hard X-ray spectroscopy; Noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-3961-4
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2009.5401726
  • Filename
    5401726