Breakdown Voltage and On-Resistance Comparison of IGBTs Based on 4H-SiC and Si

In order to compare the performance differences between power IGBTs fabricated with 4H-SiC and Si, the basic theory of semiconductor physics for 4H-SiC and Si is used to describe the quantitative relationship between their epilayer doping concentration, epilayer thickness, on-resistance and breakdown voltage, the MATLAB software is used to calculate the comparison curves. For devices with breakdown voltage of 2000V, the calculation results show that the epilayer doping concentration for 4H-SiC is one order of magnitude higher than that of Si, while the epilayer thickness and corresponding on resistance are only about 15 percent that of Si. So our research indicates that the 4H-SiC devices will have higher epilayer doping concentration and smaller epilayer thickness as well as lower on-resistance when compared with that of silicon devices.