DocumentCode
3327255
Title
Field emission information storage technology
Author
Lam, Si-Ty
Author_Institution
Hewlett Packard Labs., Hewlett-Packard Co., Palo Alto, CA, USA
fYear
2001
fDate
2001
Firstpage
135
Lastpage
136
Abstract
Field emission information storage devices (FEISD) present exciting possibilities in an era of mobile computing and applications. Ultra high storage densities of greater than one terabit per square inch may be realized from this type of device. The device comprises three major components: a field emission tip array, a storage medium and a micromover (MEMS-based micromotor). This paper discusses results and issues of the array of field emitters for the FEISD
Keywords
integrated circuit measurement; integrated memory circuits; micromotors; vacuum microelectronics; FEISD; MEMS-based micromotor; device components; field emission information storage devices; field emission tip array; field emitters; micromover; mobile applications; mobile computing; storage medium; ultra high storage densities; Anodes; Crystallization; Electrodes; Electron beams; Field emitter arrays; Material properties; Material storage; Phosphors; Testing; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location
Davis, CA
Print_ISBN
0-7803-7197-6
Type
conf
DOI
10.1109/IVMC.2001.939690
Filename
939690
Link To Document