DocumentCode :
3327255
Title :
Field emission information storage technology
Author :
Lam, Si-Ty
Author_Institution :
Hewlett Packard Labs., Hewlett-Packard Co., Palo Alto, CA, USA
fYear :
2001
fDate :
2001
Firstpage :
135
Lastpage :
136
Abstract :
Field emission information storage devices (FEISD) present exciting possibilities in an era of mobile computing and applications. Ultra high storage densities of greater than one terabit per square inch may be realized from this type of device. The device comprises three major components: a field emission tip array, a storage medium and a micromover (MEMS-based micromotor). This paper discusses results and issues of the array of field emitters for the FEISD
Keywords :
integrated circuit measurement; integrated memory circuits; micromotors; vacuum microelectronics; FEISD; MEMS-based micromotor; device components; field emission information storage devices; field emission tip array; field emitters; micromover; mobile applications; mobile computing; storage medium; ultra high storage densities; Anodes; Crystallization; Electrodes; Electron beams; Field emitter arrays; Material properties; Material storage; Phosphors; Testing; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
Type :
conf
DOI :
10.1109/IVMC.2001.939690
Filename :
939690
Link To Document :
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