Novel low temperature techniques for growth of ultrathin oxides for strained Si MOS devices

MOS capacitors with ultrathin (cong1.2 nm) oxide grown by different techniques have been fabricated on Strained Si/Relaxed SiGe/n-Si substrates with linearly graded SiGe. These techniques involve thermal oxidation, chemical oxidation and both followed by anodic oxidation. Significant improvement in interface states has been obtained when oxidation was followed by anodic oxidation. The leakage currents and reliability characteristics have also shown great improvement. Band gap offsets extracted using a simple and novel technique are found to match well with expected values.