A pnpn GaAs-InGaAs optoelectronic switch

Author

Der-Feng Guo ; Jung-Hui Tsai ; Chien-Ming Li

Author_Institution

Dept. of Electron. Eng., Air Force Acad., Kangshan

fYear

2007

fDate

29-31 Dec. 2007

Firstpage

433

Lastpage

436

Abstract

An optoelectronic switch with both n- and p-type delta-doped (delta-doped) quantum wells was investigated. The delta-doped structures formed potential wells for the carrier accumulation and potential barriers for the carrier injection. Being possessed of delta-doped sheets with different doping levels, the potential barriers were sequentially collapsed to produce a double negative-differential-resistance (NDR) phenomenon in the current-voltage (I-V) characteristics of the device due to the carrier accumulation in the potential wells. The device also showed an optical function related to the barrier heights controllable by incident light.

Keywords

gallium arsenide; indium compounds; optoelectronic devices; semiconductor quantum wells; semiconductor switches; carrier accumulation; carrier injection; double negative-differential-resistance phenomenon; pnpn optoelectronic switch; potential barriers; quantum wells; CMOS technology; Chemicals; Dielectric substrates; Educational institutions; Germanium silicon alloys; MOS devices; Oxidation; Silicon germanium; Temperature; Voltage; delta-doped; negative differential resistance; optoelectronic switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2007. ICM 2007. Internatonal Conference on

Conference_Location

Cairo

Print_ISBN

978-1-4244-1846-6

Electronic_ISBN

978-1-4244-1847-3

Type

conf

DOI

10.1109/ICM.2007.4497746

Filename

4497746