Title :
The effect of deposition parameters on performance of VME-FPC
Author :
Lu, Yongji ; Liu, Guangyi ; Xia, Shanhong ; Shao, Youj Un ; Shi, Huafen
Author_Institution :
Electron Device Lab., Inst. of Acad. of Broad. Sci., Beijing, China
Abstract :
In order to develop a multi layer photoconductive material based on CdSe with high light sensitivity for use in vacuum microelectronics flat panel camera tube (VME-FPC), a multiple sources thermal evaporated equipment with the accurate control of evaporation rate, thickness of thin film, and substrate temperature for the CdSe material has been designed and re-installed, meanwhile a new annealed technology composed of the vacuum heat pre-treatment (VBPT) and the non vacuum heat after treatment (NHAI) has been developed. The development in these two respects, along with other technologies, bring about a new multi layer CdSe photoconductive target with remarkable performance. A more dramatic result appeared: the sensitivity of our multi layer CdSe photoconductive target has been increased by two orders of magnitude while its resolution has been kept constant. This paper will mainly focus on reporting the achievements on evaporation technology, and some experimental results related to the effect of deposition parameter on performance of VME-FPC
Keywords :
II-VI semiconductors; annealing; cadmium compounds; cameras; photoconducting materials; semiconductor growth; semiconductor thin films; vacuum deposition; vacuum microelectronics; CdSe; CdSe multilayer photoconductive target; VME-FPC; annealing; light sensitivity; multiple source thermal evaporation; nonvacuum heat after treatment; resolution; substrate temperature; thin film deposition; vacuum heat pre- treatment; vacuum microelectronics flat panel camera tube; Cameras; Electron tubes; Heat treatment; Lighting control; Microelectronics; Photoconducting materials; Photoconductivity; Temperature control; Thickness control; Vacuum technology;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939704