Title :
Structure properties of cubic-AlN grown by reactive gas-timing rf magnetron sputtering
Author :
Kietipaisalsophon, N. ; Bunjongpru, W. ; Techitdheera, W. ; Nukeaw, J.
Author_Institution :
Fac. of Sci., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
Abstract :
The structure properties of aluminum nitride (AlN) thin films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). Using rf magnetron sputtering, the reactive gas-timing technique was successfully applied to grow cubic-AlN thin films. The XRD patterns of all deposited AlN films showed orientation of cubic structure in [111] and [200] planes. The lattice constant and grain size were calculated and correlated with the flow rate of N2 gas. The FESEM images showed the surface morphology of nano-particles. The nanocrystalline AlN particle sizes increased with increasing flow rate of N2.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; crystal orientation; grain size; lattice constants; nanostructured materials; particle size; scanning electron microscopy; semiconductor thin films; sputtered coatings; wide band gap semiconductors; AlN; X-ray diffraction; cubic-AlN; field emission scanning electron microscope; flow rate; grain size; lattice constant; nanocrystalline AlN particle sizes; reactive gas-timing rf magnetron sputtering; structure properties; Aluminum nitride; Electron emission; Grain size; Lattices; Magnetic properties; Scanning electron microscopy; Sputtering; Surface morphology; X-ray diffraction; X-ray scattering;
Conference_Titel :
Industrial Technology, 2002. IEEE ICIT '02. 2002 IEEE International Conference on
Print_ISBN :
0-7803-7657-9
DOI :
10.1109/ICIT.2002.1189378
