Group Delay Enhancement of SRS Slow-Light in a SOI Waveguide via p-i-n Structure

We analytically demonstrate the group delay enhancement in a silicon-on-insulator (SOI) waveguide based on stimulated Raman scattering slow-light. This achievement is accomplished by utilizing a p-i-n Structure in the waveguide. An analytical model is derived to simulate the effect of linear propagation loss and free carrier absorption on group. It is shown that applying a variable reverse bias voltage to the waveguide decreases the FCA and thus the maximum group delay can be enhanced.