• DocumentCode
    3328086
  • Title

    Ac conductivity of poly(o-methoxyaniline)

  • Author

    Nogueira, J.S. ; Mattoso, L.H.C. ; Faria, R.M.

  • Author_Institution
    Dept. Fisica/ICET, Univ. Federal de Mato Grosso, Cuiaba, Brazil
  • fYear
    1996
  • fDate
    25-30 Sep 1996
  • Firstpage
    145
  • Lastpage
    150
  • Abstract
    The AC conductivity of doped poly(o-methoxyaniline) (POMA) films, at temperatures between 4.2 and 298 K has been measured. For low frequencies the real part of the conductivity, σ(ω) is frequency-independent, and above a critical angular frequency γ it obeys an equation of the form σ(ω)∝ωs. Both the DC conductivity σ0 and the critical frequency ω increases with the temperature, however the exponential factor s is a temperature-independent quantity it was also observed that above 10 5 Hz, σ(ω) tends to a plateau. A nomadic polarization model of quasi-one-dimensional solids was used to fit the experimental results. Values for the bulk mobility, the carrier density and the transition rate of the intermolecular charge transfer were estimated
  • Keywords
    carrier density; carrier mobility; charge transfer states; conducting polymers; critical phenomena; dielectric polarisation; high-frequency effects; one-dimensional conductivity; permittivity; polymer films; 1E5 Hz; 4.2 to 298 K; AC conductivity; DC conductivity; POMA films; bulk mobility; carrier density; conducting polymers; critical angular frequency; critical frequency; doped poly(o-methoxyaniline); exponential factor; frequency-independence; intermolecular charge transfer; low frequencies; nomadic polarization model; poly(o-methoxyaniline); quasi-one-dimensional solids; real part; temperature-independent quantity; transition rate; Charge transfer; Conductive films; Conductivity measurement; Dielectric constant; Equations; Frequency; Optical polarization; Polymer films; Solid modeling; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1996. (ISE 9), 9th International Symposium on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-2695-4
  • Type

    conf

  • DOI
    10.1109/ISE.1996.578060
  • Filename
    578060