Title :
GaN planar-doped-barrier electron emitter with piezoelectric surface barrier lowering
Author :
Shen, L. ; Smochkova, I.P. ; Green, D.S. ; Heikman, S. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A planar novel vacuum microelectronic electron emitter in InGaN-GaN with a planar-doped-barrier structure was designed, grown by MBE and fabricated. The InGaN was introduced as a robust replacement for Cs to lower the surface barrier by using its piezoelectric property. Emission current and efficiency of 5×10-5 A/cm2 and 5.7×10-7 were obtained. The low current and efficiency are due to the oxidation of the surface, dislocation-assisted tunneling current and low breakdown
Keywords :
III-V semiconductors; doping profiles; gallium compounds; indium compounds; molecular beam epitaxial growth; piezoelectricity; semiconductor growth; vacuum microelectronics; wide band gap semiconductors; 0.000057 percent; GaN planar-doped-barrier electron emitter; InGaN piezoelectric property; InGaN-GaN; InGaN-GaN vacuum microelectronic electron emitter; MBE growth; breakdown; dislocation-assisted tunneling current; emission current; emission efficiency; piezoelectric surface barrier lowering; planar doped-barrier structure; surface barrier; surface oxidation; Degradation; Diodes; Electric breakdown; Electron emission; Electron guns; Gallium nitride; Microelectronics; Scattering; Surface resistance; Tunneling;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939734
