• DocumentCode
    3328155
  • Title

    Luminescence Properties of Post-Processing Porous Silicon Material

  • Author

    Meiling Yuan ; Lu Tang ; Chenfa Li ; Qingnian Wang ; Xiaofeng Zhang

  • Author_Institution
    Dept. of Phys., Nanchang Univ., Nanchang, China
  • fYear
    2011
  • fDate
    16-18 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This article gives two new and simple methods to treat porous silicon material, including acid treatment and cathode reduction treatment, to improve luminescence properties of porous silicon material. The results show that: the processing of cathode reduction can improve luminescence stability of porous silicon; the processing of acid treatment can effectively improve luminescence intensity of porous silicon. A conclusion can be drawn that the method of firstly processed porous silicon with cathode reduction treatment and secondly acid treatment has better effect to porous silicon luminescence intensity and stability than that of firstly acid treatment and secondly cathode reduction treatment.
  • Keywords
    electrochemical electrodes; elemental semiconductors; photoluminescence; porous semiconductors; silicon; Si; acid treatment; cathode reduction treatment; luminescence properties; photoluminescence spectrum; post-processing porous silicon material; Cathodes; Fluorescence; Photoluminescence; Silicon; Stability analysis; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronics (SOPO), 2011 Symposium on
  • Conference_Location
    Wuhan
  • ISSN
    2156-8464
  • Print_ISBN
    978-1-4244-6555-2
  • Type

    conf

  • DOI
    10.1109/SOPO.2011.5780603
  • Filename
    5780603