Title :
Analysis of the slope of the Fowler-Nordheim plot for field emission from semiconductors [GaN and Si]
Author :
Chung, M.S. ; Yoon, B.G.
Author_Institution :
Dept. of Phys., Ulsan Univ., South Korea
Abstract :
The field emission current densities j from semiconductors are obtained using a fully exact calculation scheme and are plotted in the Fowler-Nordheim (FN) coordinates. In the range of j⩽103A/cm2, the slope of the FN plots for semiconductors has two values while it is constant for metals. It is found that the nonlinearity in slope of the FN curve reflects the mixed effects of the barrier height, the carrier supply, tunneling, and involved energy bands
Keywords :
III-V semiconductors; current density; electron field emission; elemental semiconductors; gallium compounds; silicon; tunnelling; wide band gap semiconductors; Fowler-Nordheim plot; GaN; Si; barrier height; carrier supply; energy bands; field emission current densities; semiconductors; slope nonlinearity; tunneling; Cathodes; Conducting materials; Current density; Electrons; Feeds; Gallium nitride; Nonlinear equations; Physics; Semiconductor materials; Tunneling;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939738
