DocumentCode
3328310
Title
The properties of LPcvd Si3N4/SiO2 film electret based on silicon
Author
Zhao, MingZhou ; Huang, Zhiqiang ; Sha, Linzhuang ; Xu, Zhen
Author_Institution
Pohl Inst. of Solid State Phys., Tongji Univ., Shanghai, China
fYear
1996
fDate
25-30 Sep 1996
Firstpage
151
Lastpage
156
Abstract
By means of the technology of LPcvd and thermal oxidation the Si 3N4/SiO2 double-layer electret film was prepared on different doped silicon wafers. The experimental results show that the Si3N4/SiO2 double-layer film possesses a good storage ability of negative charges after modifying the surface with HMDS, and all of the charges were almost trapped in the bulk of upper layer Si3N4 film. In addition, the TSD spectra of Si3N4/SiO2 film were influenced greatly by the differences of the dopants in the silicon wafers
Keywords
chemical vapour deposition; dielectric thin films; electrets; elemental semiconductors; oxidation; silicon; silicon compounds; surface charging; surface treatment; thermally stimulated currents; HMDS; LPCVD Si3N4/SiO2 film electret; Si; Si-Si3N4-SiO2; Si3N4/SiO2 double-layer electret film; TSD spectra; doped silicon wafers; negative charges; storage ability; thermal oxidation; thermally stimulated discharge; upper layer Si3N4 film; Charge measurement; Corona; Current measurement; Electrets; Optical films; Semiconductor films; Silicon; Surface charging; Surface discharges; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location
Shanghai
Print_ISBN
0-7803-2695-4
Type
conf
DOI
10.1109/ISE.1996.578061
Filename
578061
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