Title :
The properties of LPcvd Si3N4/SiO2 film electret based on silicon
Author :
Zhao, MingZhou ; Huang, Zhiqiang ; Sha, Linzhuang ; Xu, Zhen
Author_Institution :
Pohl Inst. of Solid State Phys., Tongji Univ., Shanghai, China
Abstract :
By means of the technology of LPcvd and thermal oxidation the Si 3N4/SiO2 double-layer electret film was prepared on different doped silicon wafers. The experimental results show that the Si3N4/SiO2 double-layer film possesses a good storage ability of negative charges after modifying the surface with HMDS, and all of the charges were almost trapped in the bulk of upper layer Si3N4 film. In addition, the TSD spectra of Si3N4/SiO2 film were influenced greatly by the differences of the dopants in the silicon wafers
Keywords :
chemical vapour deposition; dielectric thin films; electrets; elemental semiconductors; oxidation; silicon; silicon compounds; surface charging; surface treatment; thermally stimulated currents; HMDS; LPCVD Si3N4/SiO2 film electret; Si; Si-Si3N4-SiO2; Si3N4/SiO2 double-layer electret film; TSD spectra; doped silicon wafers; negative charges; storage ability; thermal oxidation; thermally stimulated discharge; upper layer Si3N4 film; Charge measurement; Corona; Current measurement; Electrets; Optical films; Semiconductor films; Silicon; Surface charging; Surface discharges; Voltage;
Conference_Titel :
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-2695-4
DOI :
10.1109/ISE.1996.578061
