DocumentCode
3328319
Title
Nonlinear Gain and Related Effects in Quantum-Well Heterostructures
Author
Kononenko, Valerii K.
Author_Institution
Stepanov Inst. of Phys. NASB, Minsk
Volume
2
fYear
2007
fDate
1-5 July 2007
Firstpage
257
Lastpage
259
Abstract
The gain saturation in quantum-well heterostructures under the change in the populations of the subband levels is described in detail. The nonlinearity parameters are introduced and their change with the pump, radiation frequency, temperature, and the quantum well level distribution is examined. The main attention is given to quantum-well heterostructures based on III-V compounds, including GalnAsSb, GalnAs, GalnAsP, GaAs, and GalnN, which emit in the spectral interval from the mid-infrared to visible light.
Keywords
III-V semiconductors; semiconductor quantum wells; III-V compounds; nonlinear gain; quantum well level distribution; quantum-well heterostructures; subband levels; Diode lasers; Frequency; Gallium arsenide; III-V semiconductor materials; Nonlinear optics; Optical refraction; Optical saturation; Quantum well lasers; Quantum wells; Temperature distribution; amplifier; gain saturation; laser diode; nonlinearity parameter; quantum well;
fLanguage
English
Publisher
ieee
Conference_Titel
Transparent Optical Networks, 2007. ICTON '07. 9th International Conference on
Conference_Location
Rome
Print_ISBN
1-4244-1249-8
Electronic_ISBN
1-4244-1249-8
Type
conf
DOI
10.1109/ICTON.2007.4296197
Filename
4296197
Link To Document