Title :
A family of millimeter-wave MMIC amplifiers and modules
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
This paper presents our current design and development information on a family of millimeter-wave monolithic AlGaAs/InGaAs pseudomorphic low-noise HEMT amplifiers and modules operating at V- and W-bands, addressing amplifier/module design and fabrication techniques
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit noise; AlGaAs-InGaAs; III-V semiconductors; V-band; W-band; amplifier/module design; fabrication techniques; millimeter-wave MMIC amplifiers; pseudomorphic low-noise HEMT amplifiers; Circuit noise; Gain measurement; Impedance matching; Low-noise amplifiers; MMICs; Millimeter wave radar; Millimeter wave technology; Noise figure; Noise measurement; PHEMTs;
Conference_Titel :
Millimeter Waves, 1997 Topical Symposium on
Conference_Location :
Kanagawa
Print_ISBN :
0-7803-3887-1
DOI :
10.1109/TSMW.1997.702433
