Investigation of limit current density for film carbon nanocluster field emitter arrays

Author

Torgashov, G.V. ; Gulyaev, Yu.V. ; Sinitsyn, N.I. ; Zhbanov, A.I. ; Grigoriev, Yu.A.

Author_Institution

Inst. of Radio Eng. & Electron., Acad. of Sci., Saratov

fYear

2001

fDate

2001

Firstpage

253

Lastpage

254

Abstract

The effect of carbon film destruction during field emission has been revealed in the course of the first investigations of this field emission material. The main field emission centers for film carbon field emitter arrays (FEAs) are their nanocluster tops where electric field intensities are achieved which are necessary for emission. We have theoretically studied the temperature field of a film whose nanotubes are placed on a silicon substrate with the same spacings from each other. The nanotubes have identical heights and diameters. Calculation was performed using the method of finite elements

Keywords

carbon nanotubes; current density; electron field emission; finite element analysis; vacuum microelectronics; C; carbon nanocluster film; carbon nanotubes; current density; electric field; field emission; field emitter array; finite element method; temperature field; Carbon dioxide; Current density; Field emitter arrays; Finite element methods; Nanotubes; Organic materials; Semiconductor films; Silicon; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939749

Filename

939749