Transient current testing of 0.25 μm CMOS devices

Author

Kruseman, Bram ; Janssen, Peter ; Zieren, Victor

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1999

fDate

1999

Firstpage

47

Lastpage

56

Abstract

Transient current testing (I_DDT) has been often cited as an alternative and/or supplement to I_DDQ testing. The effectiveness of our I_DDT test method is compared with I_DDQ as well as with SA-based voltage testing for devices produced in 0.25 μm technology. For these devices a large vector-to-vector spread in I_DDT is observed. This spread is investigated together with the die-to-die spread to determine a pass/fail criterion. The vector-to-vector spread is compensated by comparing the measured I_DDT values with those of a known good (golden) device. A hardware solution for an I_DDT monitor is presented which includes a correction for the golden device signature. Therefore real-time I_DDT testing on a digital tester without data-processing becomes feasible

Keywords

CMOS digital integrated circuits; VLSI; automatic test pattern generation; electric current measurement; integrated circuit testing; production testing; 0.25 micron; VLSI; die-to-die spread; digital tester; golden device signature correction; hardware solution; known good device; large vector-to-vector spread; pass/fail criterion; quarter-micron CMOS devices; real-time I_DDT testing; transient current testing; Circuit testing; Costs; Hardware; Laboratories; MOSFETs; Monitoring; Silicon on insulator technology; Software testing; Threshold current; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Conference, 1999. Proceedings. International

Conference_Location

Atlantic City, NJ

ISSN

1089-3539

Print_ISBN

0-7803-5753-1

Type

conf

DOI

10.1109/TEST.1999.805613

Filename

805613