Fabrication and field emission characteristics of lateral diamond field emitter

Author

Kang, W.P. ; Wisitsora-at, A. ; Howell, M. ; Jamuhadin, A. ; Wong, Y.M. ; Soh, K.L. ; Davidson, J.L. ; Kerns, D.V.

Author_Institution

Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA

fYear

2001

fDate

2001

Firstpage

275

Lastpage

276

Abstract

A lateral diamond field emitter was fabricated by a diamond patterning technique that utilized an oxide patterning and lift-off process on a silicon-on-insulator (SOI) wafer. An anode-cathode spacing of 2 μm between the diamond anode and cathode was achieved. The fabricated lateral emitter diode exhibits excellent emission characteristics with a low turn-on voltage of 5 V and a high emission current of 6 μA from 4 diamond fingers at anode voltage of 25 V. The low turn-on voltage represents one of the best reported lateral field emitter structures. The lateral diamond field emitter is a promising candidate for vacuum microelectronic applications

Keywords

anodes; cathodes; diamond; electric current; etching; photolithography; vacuum microelectronics; 2 micron; 25 V; 5 V; 6 muA; SOI wafer; anode voltage; diamond fingers; diamond patterning technique; emission characteristics; emission current; etching; field emission characteristics; lateral diamond field emitter; lateral emitter diode; lateral field emitter structures; oxide patterning/lift-off process; photolithography; silicon-on-insulator wafer; tum-on voltage; vacuum microelectronic applications; Anodes; Cathodes; Diodes; Etching; Fabrication; Fingers; Lithography; Low voltage; Microelectronics; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939760

Filename

939760