DocumentCode :
3328554
Title :
Substitution of diamond with insulator in nanostructured carbon low-field emitters
Author :
Karabutov, A.V. ; Ralchenko, V.G. ; Korchagina, S.B. ; Gordeev, S.K.
Author_Institution :
Gen. Phys. Inst., Moscow, Russia
fYear :
2001
fDate :
2001
Firstpage :
277
Lastpage :
278
Abstract :
It was found that diamond structures such as CVD diamond films and diamond/carbon composites can show outstanding low-field electron emission properties with threshold fields of 1-3 V/μm. Numerous microscopic studies of the emission centers show that the emission is associated just with diamond grain boundaries, diamond/sp2 -bonded carbon interfaces and thin conducting carbon layers covering the diamond particles and placed between the diamond grains. However, a role of the diamond phase for the emission is still not clear enough. In particular, the Negative Electron Affinity (NEA) of diamond is often considered as one of the origin of the excellent field emission
Keywords :
CVD coatings; carbon; diamond; electron affinity; electron field emission; grain boundaries; nanostructured materials; C; CVD films; diamond structures; diamond/carbon composites; diamond/sp2-bonded carbon interfaces; emission centers; grain boundaries; nanostructured C low-field emitters; negative electron affinity; Carbon dioxide; Diamond-like carbon; Dielectrics and electrical insulation; Electric resistance; Electron emission; Mechanical factors; Nanocomposites; Physics; Scanning electron microscopy; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
Type :
conf
DOI :
10.1109/IVMC.2001.939761
Filename :
939761
Link To Document :
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