Substitution of diamond with insulator in nanostructured carbon low-field emitters

Author

Karabutov, A.V. ; Ralchenko, V.G. ; Korchagina, S.B. ; Gordeev, S.K.

Author_Institution

Gen. Phys. Inst., Moscow, Russia

fYear

2001

fDate

2001

Firstpage

277

Lastpage

278

Abstract

It was found that diamond structures such as CVD diamond films and diamond/carbon composites can show outstanding low-field electron emission properties with threshold fields of 1-3 V/μm. Numerous microscopic studies of the emission centers show that the emission is associated just with diamond grain boundaries, diamond/sp² -bonded carbon interfaces and thin conducting carbon layers covering the diamond particles and placed between the diamond grains. However, a role of the diamond phase for the emission is still not clear enough. In particular, the Negative Electron Affinity (NEA) of diamond is often considered as one of the origin of the excellent field emission

Keywords

CVD coatings; carbon; diamond; electron affinity; electron field emission; grain boundaries; nanostructured materials; C; CVD films; diamond structures; diamond/carbon composites; diamond/sp²-bonded carbon interfaces; emission centers; grain boundaries; nanostructured C low-field emitters; negative electron affinity; Carbon dioxide; Diamond-like carbon; Dielectrics and electrical insulation; Electric resistance; Electron emission; Mechanical factors; Nanocomposites; Physics; Scanning electron microscopy; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939761

Filename

939761