Title :
Characteristics of phosphorus implanted MPCVD diamond films
Author :
Lee, Jong Duk ; Cho, Euo Sik ; Park, Byung-Gook ; Kwon, Sang Jik
Author_Institution :
ISRC & Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
Phosphorus ions were implanted on MPCVD (microwave plasma chemical vapor deposition) diamond films in various growth steps and the films were electrically characterized. When diamond films were grown after implantation, improved electrical characteristics were obtained. The results show that phosphorus ions on the Si-diamond interface have an influence on field emission from diamond
Keywords :
diamond; doping profiles; field emission; ion implantation; phosphorus; plasma CVD; plasma radiofrequency heating; C:P-Si; P implantation; Si-diamond interface; diamond films; electrical characteristics; field emission; growth steps; microwave plasma chemical vapor deposition; phosphorus implanted MPCVD diamond films; phosphorus ions; Anodes; Chemical vapor deposition; Doping; Electric variables; Electron emission; Impurities; Plasma chemistry; Plasma immersion ion implantation; Plasma properties; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939763
