Title :
Current image tunneling spectroscopies of chemical vapor deposited diamond films
Author :
Lin, I.N. ; Chen, T.T. ; Chou, Y.P. ; Cheng, H.F.
Author_Institution :
Mater. Sci. Center, Nat. Tsing-Hua Univ., Hsin-Chu, Taiwan
Abstract :
Localized electron field emission properties of the boron- (or nitrogen-) doped diamond films were examined using current image tunneling spectroscopy (CITS). The electron field emission mechanism implied by these measurements was discussed
Keywords :
atomic force microscopy; boron; diamond; electron affinity; electron field emission; nitrogen; plasma CVD coatings; scanning tunnelling microscopy; AFM; C:B; C:N; STM; chemical vapor deposited diamond films; current image tunneling spectroscopies; localized electron field emission properties; plasma CVD films; Atomic force microscopy; Chemicals; Current measurement; Electron emission; Photonic band gap; Plasma properties; Scanning electron microscopy; Spectroscopy; Surface morphology; Tunneling;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939764
