Diamond field emission triode with low gate turn-on voltage and high gain

Author

Wisitsora-At, A. ; Kang, W.P. ; Davidson, J.L. ; Kerns, D.V. ; Fisher, T.

Author_Institution

Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA

fYear

2001

fDate

2001

Firstpage

285

Lastpage

286

Abstract

A diamond field emission triode with very low gate turn-on voltage of 10 V and high gain factor of 250 is reported. The gated diamond triode was fabricated with a self-aligning gate technique on a silicon-on-insulator (SOI) wafer. The I_a-V_g plot of emission characteristics with 4 tips shows a very low gate turn-on voltage of 10 V and high emission current of 6 μA at gate voltage of 20 V. I_a-V_a plots of emission characteristics demonstrate the desired saturation behavior of a field emission transistor with a high voltage gain of 250. The low turn-on gate voltage and high gain factor is comparable to solid-state devices, confirming that the diamond field emission triode has significant potential for IC-compatible vacuum microelectronic applications and beyond

Keywords

diamond; electron field emission; triodes; vacuum microelectronics; 10 V; 20 V; 6 muA; C; diamond field emission triode; emission characteristics; field emission transistor; high emission current; high gain factor; low gate turn-on voltage; saturation behavior; self-aligning gate technique; silicon-on-insulator wafer; vacuum microelectronic applications; Bonding; Dielectric substrates; Electron emission; Etching; Fabrication; Low voltage; Microelectronics; Silicon on insulator technology; Solid state circuits; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939765

Filename

939765