High temperature inductive switching of SiC GTO and diode

Author

Bayne, S.B. ; Tipton, C.W. ; Griffin, T.E. ; Scozzie, C.J. ; Geil, B.R.

Author_Institution

Army Res. Lab., AMSRL-SE-DP, Adelphi, MD, USA

fYear

2002

fDate

30 June-3 July 2002

Firstpage

207

Lastpage

209

Abstract

Future US Army motor control applications will require power devices to operate for thousands of hours at case temperatures of 150°C and higher. For reliable operation of silicon (Si)-base power electronic, the operational case temperature must be below 120°C. Because of this temperature limitation of Si, new wide bandgap materials such as silicon carbide (SiC) are being investigated. The wide bandgap material allows SiC devices to operate at temperatures significantly greater than 150°C. For high power and high voltage applications the gate turn-off thyristor (GTO) is the switch of choice. This paper presents the results of a SiC GTO and a SiC p-i-n diode both operating at case temperatures up to 150°C. The GTO switches into an inductive load with currents up to 5 Amps, baseplate temperature up to 150°C and switching frequency up to 10 kHz.

Keywords

machine control; p-i-n diodes; power semiconductor diodes; power semiconductor switches; silicon compounds; thyristor applications; wide band gap semiconductors; 10 kHz; 150 degC; 5 A; SiC; SiC GTO; SiC diode; US Army motor control applications; gate turn-off thyristor; high power; high temperature inductive switching; high voltage; operational case temperature; p-i-n diode; power devices; silicon carbide; wide bandgap materials; Motor drives; P-i-n diodes; Photonic band gap; Power electronics; Silicon carbide; Switches; Switching frequency; Temperature; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Conference Record of the Twenty-Fifth International

ISSN

1076-8467

Print_ISBN

0-7803-7540-8

Type

conf

DOI

10.1109/MODSYM.2002.1189452

Filename

1189452