DocumentCode
3328736
Title
Silicon doped diamond-like carbon films as a coating for improvement of electron field emission
Author
Evtukh, Anatoli A. ; Litovchenko, Volodimir G. ; Litvin, Yurii M. ; Fedin, Dmitrii V. ; Chakhovskoi, Andrei G. ; Felter, Thomas E.
Author_Institution
Inst. of Semicond. Phys., Kiev, Ukraine
fYear
2001
fDate
2001
Firstpage
295
Lastpage
296
Abstract
In this work the influence of in-situ silicon doping of PECVD DLC films on their properties and emission parameters of silicon tip array coated such films have been investigated. The idea was to make easier the electron transport from silicon tip through DLC film and enhance the field emission efficiency from silicon tips coated silicon doped DLC films
Keywords
carbon; electron field emission; elemental semiconductors; plasma CVD coatings; silicon; vacuum microelectronics; PECVD coating; Si-C:Si; diamond-like carbon film; electron field emission; electron transport; in-situ silicon doping; silicon tip array; Coatings; Conductive films; Current measurement; Current-voltage characteristics; Diamond-like carbon; Doping; Electron emission; Semiconductor films; Silicon; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location
Davis, CA
Print_ISBN
0-7803-7197-6
Type
conf
DOI
10.1109/IVMC.2001.939770
Filename
939770
Link To Document