DocumentCode
3328767
Title
Temperature dependence on electron emission of boron-doped diamond
Author
Yamada, Takatoshi ; Sawabe, Atsuhito ; Suzuki, Yu ; Okano, Ken
Author_Institution
Aoyama Gakuin Univ., Tokyo, Japan
fYear
2001
fDate
2001
Firstpage
299
Lastpage
300
Abstract
Temperature dependence on electron emission of B-doped CVD diamond is investigated in order to understand the electron emission properties. Films are deposited on Si substrate using dc plasma CVD. The obtained films are identified as polycrystalline diamond using XRD, RHEED, EELS and Raman spectroscopy. The threshold voltage in the electron emission properties becomes lower as increasing the temperature
Keywords
Raman spectra; X-ray diffraction; boron; diamond; electron energy loss spectra; electron field emission; plasma CVD coatings; reflection high energy electron diffraction; C:B; DC plasma CVD; EELS; RHEED; Raman spectroscopy; Si; Si substrate; XRD; boron doped polycrystalline diamond film; electron emission; temperature dependence; threshold voltage; Anodes; Cathodes; Electron emission; Plasma materials processing; Plasma properties; Plasma temperature; Semiconductor films; Substrates; Temperature dependence; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location
Davis, CA
Print_ISBN
0-7803-7197-6
Type
conf
DOI
10.1109/IVMC.2001.939772
Filename
939772
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