• DocumentCode
    3328798
  • Title

    Electronic Structure of InAs/InP Elliptical Quantum Wires

  • Author

    Duan Xiu-Zhi ; Wang Guang-Xin ; Liu De ; Gou Bing-Ping

  • Author_Institution
    Coll. of Light Ind., Hebei United Univ., Tangshan, China
  • fYear
    2011
  • fDate
    16-18 May 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The problem of electron levels in InAs/InP elliptical quantum wires (QWRs) is investigated in detail by using the effective mass approximation and the diagonalization method. In cases of both the absence and presence of a magnetic field the electron states are given as functions of the ellipticity and parameter. The calculations show that the energy levels in elliptical quantum wires are dramatically influenced by the shape of the wires and the energy decreases as the eccentricity increasing when the parameter is fixed, and decreases as the parameter increasing when the ellipticity is fixed. The quantum behaviors of elliptical quantum wires are similar to that of other shaped QWRs which were studied before.
  • Keywords
    III-V semiconductors; band structure; effective mass; indium compounds; semiconductor quantum wires; InAs-InP; diagonalization method; eccentricity; effective mass approximation; electron levels; electron states; electronic stucture; elliptical quantum wires; energy levels; Electric potential; Excitons; Indium phosphide; Magnetic confinement; Magnetic fields; Quantum mechanics; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronics (SOPO), 2011 Symposium on
  • Conference_Location
    Wuhan
  • ISSN
    2156-8464
  • Print_ISBN
    978-1-4244-6555-2
  • Type

    conf

  • DOI
    10.1109/SOPO.2011.5780629
  • Filename
    5780629