• DocumentCode
    3328811
  • Title

    Evolution of charge distributions in polymers during annealing

  • Author

    Sessler, G.M. ; Yang, G.M.

  • Author_Institution
    Inst. for Electroacoust., Tech. Univ. Darmstadt, Germany
  • fYear
    1996
  • fDate
    25-30 Sep 1996
  • Firstpage
    165
  • Lastpage
    170
  • Abstract
    Polymer films of polyfluoroethylenepropylene (FEP) and polyimide (PI) of 25 μm thickness are charged with monoenergetic electron beams of a range smaller than the sample thickness. Thereafter, the charge distribution in the thickness direction and its change with time at an annealing temperature of 120°C are measured with the laser-induced pressure-pulse (LIPP) method. The experimental data are analyzed with a model of charge buildup during electron-beam irradiation and charge transport during annealing. The model takes into consideration the charge deposition and dose profiles, the radiation-induced conductivity, the carrier mobility, trapping time and maximum trap density. Evaluation of the data yields values of the mobility-lifetime product and shows that retrapping is fast in FEP and slow in PI in the temperature range considered
  • Keywords
    annealing; carrier lifetime; carrier mobility; electron beam effects; organic insulating materials; polymer films; space charge; 120 C; 25 mum; annealing; carrier mobility; carrier trapping time; charge buildup model; charge deposition profile; charge distribution evolution; charge transport; dose profile; electron-beam irradiation; laser-induced pressure-pulse method; maximum trap density; mobility-lifetime product; monoenergetic electron beams; polyfluoroethylenepropylene; polyimide; polymer films; radiation-induced conductivity; retrapping speed; space charge peak; Annealing; Charge measurement; Current measurement; Electron beams; Electron traps; Polyimides; Polymer films; Temperature distribution; Thickness measurement; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1996. (ISE 9), 9th International Symposium on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-2695-4
  • Type

    conf

  • DOI
    10.1109/ISE.1996.578063
  • Filename
    578063