Common base HBTs for Ka-band applications

Author

Tanaka, S. ; Amamiya, Y. ; Murakami, S. ; Shimawaki, Hidetaka ; Goto, N. ; Takayama, Y. ; Honjo, Kazuhiko

Author_Institution

Opto-Electron. Res. Lab., NEC Corp., Tsukuba, Japan

fYear

1997

fDate

7-8 Jul 1997

Firstpage

27

Lastpage

30

Abstract

It has been commonly accepted that common-base (CB) HBTs are more suitable for millimeter-wave power amplifiers than common-emitter HBTs due to their superior gain. However, the essential gain behavior of CB HBTs is not well understood in detail, and thus the factors limiting their mm-wave performance are not yet clarified. In this work, basic design guidelines of CB HBTs are presented based on a detailed gain performance analysis. In particular, we stress the importance of improving the f_T at high collector voltages and reducing the feedback component of wire parasitic capacitance. The analysis is in good agreement with the measured RF performance of the fabricated HBTs

Keywords

equivalent circuits; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave power amplifiers; semiconductor device measurement; semiconductor device models; Ka-band applications; collector voltages; common-base HBTs; feedback component; gain behavior; millimeter-wave power amplifiers; performance analysis; wire parasitic capacitance; Feedback; Guidelines; Parasitic capacitance; Performance analysis; Performance gain; Power amplifiers; Radio frequency; Stress; Voltage; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Waves, 1997 Topical Symposium on

Conference_Location

Kanagawa

Print_ISBN

0-7803-3887-1

Type

conf

DOI

10.1109/TSMW.1997.702436

Filename

702436