Title :
220 - 250-GHz Phased-Array Circuits in 0.13-/spl mu/m SiGe BiCMOS Technology
Author :
Elkhouly, Mohamed ; Glisic, Savo ; Meliani, Chafik ; Ellinger, F. ; Scheytt, J. Christoph
Author_Institution :
Circuit Design Dept., IHP Microelectron., Frankfurt (Oder), Germany
Abstract :
This paper describes the design of 220-250-GHz phased-array circuits in 0.13- μm BiCMOS technology. The design aspects of the active and passive devices that are used in the phased-array systems, such as balun, Wilkinson divider, and branch-line coupler, are presented in details. A millimeter-wave vector modulator is designed to support both amplitude and phase control for beam-forming applications. The designed circuits are integrated together to form a four-channel 220-250-GHz phased-array chip. Each channel exhibits 360° phase control with 18 dB of amplitude control. The entire chip draws 167 mA from a 3.3-V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging, radiometry, and communication applications.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; array signal processing; baluns; bipolar MIMIC; field effect MIMIC; millimetre wave couplers; modulators; phase shifters; power dividers; BiCMOS technology; SiGe; Wilkinson divider; active device; amplitude control; baluns; beamforming application; branch line coupler; communication application; current 167 mA; frequency 220 GHz to 250 GHz; imaging application; low power consumption; millimeter wave phase shifting; millimeter wave vector modulator; passive device; phase control; phased array chip; phased array circuit; radiometry application; size 0.13 mum; voltage 3.3 V; Millimeter wave; SiGe BiCMOS; phased array; power dividers; vector modulator;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2013.2258032
