Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation

Author

Tadjer, Marko J. ; Hobart, Karl D. ; Stahlbush, Robert E. ; McMarr, Patrick J. ; Hughes, Hap L. ; Imhoff, Eugene A. ; Kub, Fritz J. ; Haney, Sarah K.

Author_Institution

Univ. of Maryland, College Park, MD, USA

fYear

2009

fDate

Oct. 24 2009-Nov. 1 2009

Firstpage

168

Lastpage

172

Abstract

Electrical characterization of 4H-SiC epitaxial MOS devices using current-voltage (I-V), capacitance-voltage (C-V), and thermally stimulated current (TSC) measurements are presented. The effect of gamma ray irradiation on the TSC spectra of epitaxial 4H-SiC MOSCAP devices is discussed. On non-irradiated samples, two TSC peaks are observed near 55 K and 80 K. Due to the generated oxide charge during irradiation, the 80 K emission split into two constituent peaks. These have been attributed to hole traps and Al acceptors.

Keywords

MOS capacitors; gamma-ray effects; hole density; hole traps; semiconductor device testing; silicon compounds; thermally stimulated currents; 4H-SiC epitaxial MOS devices; Al acceptors; SiC; acceptor trap density; capacitance-voltage measurement; current-voltage measurement; electrical characterization; epitaxial 4H-SiC MOSCAP devices; gamma irradiation; hole trap density; oxide charge; thermally stimulated current measurement; thermally stimulated current separation; Capacitance-voltage characteristics; Cryogenics; Current measurement; Electron traps; Ionization; Luminescence; MOS capacitors; MOS devices; Silicon carbide; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE

Conference_Location

Orlando, FL

ISSN

1095-7863

Print_ISBN

978-1-4244-3961-4

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2009.5401822

Filename

5401822